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Numéro de référence | HM62V8100LTTI-5 | ||
Description | 8M SRAM | ||
Fabricant | Renesas Technology | ||
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HM62V8100I Series
Wide Temperature Range Version
8 M SRAM (1024-kword × 8-bit)
ADE-203-1278B (Z)
Rev. 1.0
Mar. 12, 2002
Description
The Hitachi HM62V8100I Series is 8-Mbit static RAM organized 1,048,576-word × 8-bit. HM62V8100I
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in 48 bumps chip size package with 0.75 mm bump pitch or standard 44-pin TSOP II
for high density surface mounting.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55 ns (Max)
• Power dissipation:
Active: 6.0 mW/MHz (Typ)
Standby: 1.5 µW (Typ)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature range: –40 to +85°C
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Pages | Pages 18 | ||
Télécharger | [ HM62V8100LTTI-5 ] |
No | Description détaillée | Fabricant |
HM62V8100LTTI-5 | 8M SRAM | Renesas Technology |
HM62V8100LTTI-5SL | 8M SRAM | Renesas Technology |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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