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Numéro de référence | R1LP0408CSB-5SC | ||
Description | 4M SRAM | ||
Fabricant | Renesas | ||
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1 Page
R1LP0408C-C Series
4 M SRAM (512-kword × 8-bit)
REJ03C0077-0100Z
Rev. 1.00
Aug.01.2003
Description
The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LP0408C-C Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II.
Features
• Single 5 V supply: 5 V ± 10%
• Access time: 55/70 ns (max)
• Power dissipation:
Active: 10 mW/MHz (typ)
Standby: 4 µW (typ)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Directly TTL compatible.
All inputs and outputs
• Battery backup operation.
• Operating temperature: −20 to +70°C
Rev.1.00, Aug.01.2003, page 1 of 13
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Pages | Pages 14 | ||
Télécharger | [ R1LP0408CSB-5SC ] |
No | Description détaillée | Fabricant |
R1LP0408CSB-5SC | 4M SRAM | Renesas |
R1LP0408CSB-5SI | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) | Hitachi Semiconductor |
R1LP0408CSB-5SI | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) | Hitachi Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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