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Comchip - Silicon Bridge Rectifiers

Numéro de référence KBU3506-G
Description Silicon Bridge Rectifiers
Fabricant Comchip 
Logo Comchip 





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KBU3506-G fiche technique
Silicon Bridge Rectifiers
KBU35005-G Thru. KBU3510-G
Reverse Voltage: 50 to 1000V
Forward Current: 35.0A
RoHS Device
Features
-Surge overload rating - 400 amperes peak.
-Ideal for printed circuit board.
-Plastic material has U/L flammability
classification 94V-0
Mechanical Data
-Case: Molded plastic, KBU
-Mounting position: Any
-Weight: 7.40grams
0.700(17.8)
0.600(16.8)
KBU
0.157(4.0)*45°
0.935(23.7)
0.895(22.7)
0.15ΦX23L
(3.8ΦX5.7L)
HOLE TH RU
300
(7 .5)
0.780(19.8)
0.740(18.8)
1.00
(25 .4)MIN.
0.052(1.3)DIA.
0.048(1.2)TYP.
.08 7 (2.2)
.0 71 (1 .8)
0.220(5.6)
0.180(4.6)
0.276(7.0)
0.256(6.5)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol KBU
35005-G
KBU
3501-G
KBU
3502-G
KBU
3504-G
KBU
3506-G
Maximum Reverse Peak Repetitive Voltage
VRRM
50
100 200 400 600
Maximum RMS Bridge Input Voltage
VRMS
35
70 140 280 420
Maximum DC Blocking Voltage
VDC 50 100 200 400 600
Maximum Average Forward (With heatsink Note1)
Rectified Current @Tc=100°C (without hestsink)
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
I(AV)
IFSM
35.0
4.2
400
Maximum Forward Voltage at 17.5A DC
VF
1.1
Maximum Reverse Current
At Rate DC Blocking Voltage
Operating Temperature Range
Storage Temperature Range
@TJ=25°C
@TJ=125°C
IR
TJ
TSTG
10.0
500
-55 to +125
-55 to +150
Notes:
1. Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.
KBU
3508-G
800
560
800
KBU
3510-G
Unit
1000
V
700 V
1000
V
A
A
V
μA
°C
°C
QW-BBR74
Comchip Technology CO., LTD.
REV:A
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