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PDF 50N30 Data sheet ( Hoja de datos )
| Número de pieza | 50N30 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 50N30 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SEMICONDUCTOR
50N30 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
50A, 300Volts
DESCRIPTION
The Nell 50N30 is a three-terminal silicon device
with current conduction capability of 50A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 300V, and max. threshold voltage of 6.5 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
PWM motor controls, bridge circuits, battery chargers,
DC choppers, temperature and lighting controls and
general purpose switching applications.
FEATURES
RDS(ON) = 0.080Ω @ VGS = 10V
Ultra low gate charge(65nC typical)
Low reverse transfer capacitance
(CRSS = 60pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
GD S
TO-247AB
(50N30C)
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) typical
50
300
0.080 @ VGS = 10V
65
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=50A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
lAS=50A, L=0.1mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Linear derating factor above TC=25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.lAS=50A, L=0.1mH, VDD=50V, RGS =25Ω, starting TJ = 25°C.
3.ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
VALUE
300
300
±20
50
35
150
50
50
1500
50
690
5.8
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
°C/W
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
Fig.1 Output characteristics
50
TJ = 25°C
45
VGS = 10V
40
35 9V
30
25
20 8.5V
15
8V
10
5 7V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Drain-source Voltage, VDS(V)
Fig.3 Output characteristics
50
45 TJ = 125°C
VGS = 10V
40 9V
35
30
25 8V
20
15
7V
10
5
6V
0
0 12 3 4 5 6 7 8 9
Drain-source Voltage, VDS(V)
50N30 Series RRooHHSS
Nell High Power Products
Fig.2 Extended output characteristics
90
80 TJ = 25°C VGS = 10V
70
9.5V
60
50
9V
40
30
20
10
0
0
8.5V
8V
7V
5 10 15 20 25 30
Drain-source Voltage, VDS(V)
Fig.4 RDS(on) Normalized to lD =25A value vs.
Junction temperature
3.0
VGS = 10V
2.6
2.2
lD = 50A
1.8
lD = 25A
1.4
1.0
0.6
0.2
-50 -25 0 25 50 75 100 125 150
Junction temperature, TJ (°C)
Fig.5 RDS(on) Normalized to lD =25A value vs.
Drain current
3.0
2.8 VGS = 10V
2.6
2.4
2.2 TJ = 125°C
2.0
1.8
1.6
1.4
1.2
TJ = 25 °C
1.0
0.8
0
10 20 30 40 50 60 70
Drain current, lD(A)
www.nellsemi.com
Page 5 of 7
Fig.6 Maximum drain current vs. Case temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
Case temperature, TC (°C)
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 50N30.PDF ] | |
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