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Numéro de référence | QLF063D | ||
Description | 660 nm 100mW FP LASER TO-CAN | ||
Fabricant | QD Laser | ||
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QLF063A /QLF063D
660 nm 100mW FP LASER TO-CAN
C00100-01 January 2013
1. DESCRIPTION
The QLF063A/QLF063D are 660 nm quantum well laser devices designed for high output power application. The
laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap.
2. FEATURES
660 nm FP-LD
5.6mm TO-CAN package
High output power of 100mW and high slope efficiency
Including monitor PD
Two types of pin assignments: anode common type (QLF063A)/cathode common type (QLF063D)
3. APPLICATIONS
Industrial laser markers
Measuring instruments
Life science applications
4. ABSOLUTE MAXIMUM RATING
PARAMETER
Optical output power
LD reverse voltage
PD reverse voltage
Operation temperature
Storage temperature
SYMBOL
Po
VRLD
VRPD
Tc
Tstg
(CW operation, Tc = 25°C, unless otherwise specified)
RATING
UNIT
130 mW
2V
30
-10 to 60
-40 to 85
V
C
C
1/4
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Pages | Pages 4 | ||
Télécharger | [ QLF063D ] |
No | Description détaillée | Fabricant |
QLF063A | 660 nm 100mW FP LASER TO-CAN | QD Laser |
QLF063A-4030T50 | 640 nm 30mW FP LASER TO-CAN | QD Laser |
QLF063A-AA | 660 nm 50mW FP LASER TO-CAN | QD Laser |
QLF063A-P120 | 660 nm 120mW FP LASER TO-CAN | QD Laser |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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