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Fairchild Semiconductor - 75A Field Stop Trench IGBT

Numéro de référence FGH75T65UPD
Description 75A Field Stop Trench IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGH75T65UPD fiche technique
August 2012
FGH75T65UPD
650V, 75A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 75A
• High input impedance
• Tightened Parameter Distribution
• RoHS compliant
• Short Circuit Ruggedness > 5us @25oC
General Description
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum perfor-
mance for Solar Inverter , UPS and Digital Power Generator
where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Digital Power Generator
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
SCWT
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FGH75T65UPD Rev. C0
1
C
G
E
Ratings
650
± 20
150
75
225
75
50
225
375
187
5
-55 to +175
-55 to +175
300
Units
V
V
A
A
A
A
A
A
W
W
us
oC
oC
oC
Typ.
-
-
-
Max.
0.40
0.86
40
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com

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