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Fairchild Semiconductor - 75A Field Stop IGBT

Numéro de référence FGH75N60SF
Description 75A Field Stop IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGH75N60SF fiche technique
FGH75N60SF
600V, 75A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =2.3V @ IC = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
December 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
150
75
225
452
181
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.276
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH75N60SF Rev. A
1
www.fairchildsemi.com

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