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PDF K9F4G08U0E Data sheet ( Hoja de datos )
| Número de pieza | K9F4G08U0E | |
| Descripción | 4Gb E-die NAND Flash | |
| Fabricantes | Samsung | |
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SAMSUNG CONFIDENTIAL
Rev.1.2, Jun. 2013
K9F4G08U0E
K9K8G08U0E
K9K8G08U1E
K9WAG08U1E
4Gb E-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2013 Samsung Electronics Co., Ltd. All rights reserved.
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K9F4G08U0E K9K8G08U1E
K9K8G08U0E K9WAG08U1E
datasheet
SAMSUNG CONFIDENTIAL
Rev. 1.2
FLASH MEMORY
1.0 INTRODUCTION
1.1 General Description
Offered in 512Mx8bit, the K9F4G08U0E is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides
the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400s on the (2K+64)Byte page
and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per
Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and
erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take
advantage of the K9F4G08U0Es extended reliability of TBD program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out
algorithm. The K9F4G08U0E is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applica-
tions requiring non-volatility.
1.2 Features
Voltage Supply
- 3.3V Device(K9F4G08U0E) : 2.7V ~ 3.6V
Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 40s(Max.)
- Serial Access : 25ns(Min.)
Fast Write Cycle Time
- Page Program time : 400s(Typ.)
- Block Erase Time : 4.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- ECC Requirement : Please refer to the qualification report
- Endurance & Data Retention : Please refer to the qualification report
Command Register Operation
Unique ID for Copyright Protection
Package :
- K9F4G08U0E-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9K8G08U0E-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9K8G08U1E-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9WAG08U1E-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
1.3 PRODUCT LIST
Part Number
K9F4G08U0E-S
K9K8G08U0E-S
K9K8G08U1E-S
K9WAG08U1E-S
Vcc Range
2.70 ~ 3.60V
Organization
X8
PKG Type
TSOP1
-5-
5 Page 
K9F4G08U0E K9K8G08U1E
K9K8G08U0E K9WAG08U1E
datasheet
SAMSUNG CONFIDENTIAL
Rev. 1.2
FLASH MEMORY
2.1 Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9XXG08XXE-XCB0
K9XXG08XXE-XIB0
K9XXG08XXE-XCB0
K9XXG08XXE-XIB0
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
IOS
Rating
-0.6 to +4.6
-0.6 to +4.6
-0.6 to Vcc + 0.3 (< 4.6V)
-10 to +125
-40 to +125
-65 to +150
5
NOTE :
1) Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Unit
V
C
C
mA
2.2 Recommended Operating Conditions
(Voltage reference to GND, K9XXG08XXE-XCB0 :TA=0 to 70C, K9XXG08XXE-XIB0:TA=-40 to 85C)
Parameter
Supply Voltage
Supply Voltage
Symbol
VCC
VSS
K9F4G08U0E(3.3V)
Min Typ.
2.7 3.3
00
Max
3.6
0
Unit
V
V
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| Páginas | Total 51 Páginas | |
| PDF Descargar | [ Datasheet K9F4G08U0E.PDF ] | |
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