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IRLH6224PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRLH6224PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRLH6224PBF fiche technique
VDS
Vgs max
RDS(on) max
(@VGS = 4.5V)
(@VGS = 2.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
20
± 12
3.0
4.0
44
80i
V
V
mΩ
nC
A
Applications
Battery Protection Switch
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.4°C/W)
100% Rg tested
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRLH6224PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLH6224TRPBF
IRLH6224TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
20
± 12
28
22
105hi
67h
80i
400
3.6
52
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
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May 12, 2014

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