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IRFHM830DPbF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFHM830DPbF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFHM830DPbF fiche technique
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
4.3
13
1.1
40h
V
mΩ
nC
Ω
A
Applications
Synchronous MOSFET for Buck Converters
Features and Benefits
Features
Low RDSon (4.3mΩ)
Schottky intrinsic diode with low forward voltage
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFHM830DPbF
HEXFET® Power MOSFET
3.3mm x 3.3mm PQFN
results in
Benefits
Lower Conduction Losses
Lower switching losses
Increased Power Density
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM830DTRPbF
IRFHM830DTR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9
Max.
30
±20
20
16
40h
40h
160
2.8
37
0.022
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
June 6, 2014

PagesPages 9
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