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Numéro de référence | IRFH8324TRPBF | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
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1 Page
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
4.1
6.3
14
50i
V
V
mΩ
nC
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
IRFH8324PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
results in
⇒
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH8324TRPBF
IRFH8324TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
23
18
90hi
57hi
50i
200
3.6
54
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
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January 21, 2014
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Pages | Pages 9 | ||
Télécharger | [ IRFH8324TRPBF ] |
No | Description détaillée | Fabricant |
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