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IRFH7110TRPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFH7110TRPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFH7110TRPBF fiche technique
IRFH7110PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
QG (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
100
± 20
13.5
58
0.6
50i
V
V
mΩ
nC
Ω
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (< 13.5mW)
Low Thermal Resistance to PCB (< 1.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH7110TRPBF
IRFH7110TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
100
± 20
11
8.6
58hi
37h
50i
240
3.6
104
0.029
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 13, 2014

PagesPages 9
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