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IRFH5303TRPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFH5303TRPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFH5303TRPBF fiche technique
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
4.2 m:
15 nC
0.6 :
82 A
Applications
Control MOSFET for high frequency buck converters
Features and Benefits
Features
Low charge (typical 15nC)
Low Rg (typical 0.6 Ω)
Low Thermal Resistance to PCB (<2.7°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFH5303PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5303TRPBF
IRFH5303TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
23
18
82
52
330
3.6
46
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 8
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May 13, 2014

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