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IRFH5302DPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFH5302DPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFH5302DPBF fiche technique
IRFH5302DPbF
VDS
RDS(on) max
(@VGS = 10V)
VSD max
(@IS = 5.0A)
trr (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
2.5 m
0.65
19
h100
V
ns
A
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<2.5m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5302DTRPBF
IRFH5302DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Qua nti ty
Tape and Reel
4000
Tape and Reel
400
Note
EOL Notice #259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
Max.
30
± 20
29
23
100
100
400
3.6
104
0.83
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
March 6, 2014

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