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UPD42S65405G5-A60-7JD fiches techniques PDF

NEC - 64M-BIT DYNAMIC RAM

Numéro de référence UPD42S65405G5-A60-7JD
Description 64M-BIT DYNAMIC RAM
Fabricant NEC 
Logo NEC 





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UPD42S65405G5-A60-7JD fiche technique
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4264405, 42S65405, 4265405
64 M-BIT DYNAMIC RAM
16 M-WORD BY 4-BIT, EDO
Description
The µPD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO.
EDO is a kind of the page mode and is useful for the read operation.
Besides, the µPD42S65405 can execute CAS before RAS self refresh.
These are packaged in 32-pin plastic TSOP (II) and 32-pin plastic SOJ.
Features
• EDO (Hyper page mode)
• 16,777,216 words by 4 bits organization
• Single +3.3 V ± 0.3 V power supply
• Fast access and cycle time
Part number
µPD4264405-A50
µPD42S65405-A50, 4265405-A50
µPD4264405-A60
µPD42S65405-A60, 4265405-A60
Power consumption Access time
Active (MAX.)
(MAX.)
360 mW
468 mW
50 ns
324 mW
396 mW
60 ns
R/W cycle time
(MIN.)
84 ns
104 ns
EDO (Hyper page mode)
cycle time (MIN.)
20 ns
25 ns
• The µPD42S65405 can execute CAS before RAS self refresh.
Part number
µPD42S65405
Refrech cycle
4,096 cycles/128 ms
µPD4264405
µPD4265405
8,192 cycles/64 ms
4,096 cycles/64 ms
4,096 cycles/64 ms
Refresh
RAS only refresh, Normal read/write,
CAS before RAS self refresh,
CAS before RAS refresh, Hidden refresh
RAS only refresh, Normal read/write
CAS before RAS refresh, Hidden refresh
RAS only refresh, Normal read/write,
CAS before RAS refresh, Hidden refresh
Power consumption
at standby (MAX.)
0.72 mW
(CMOS level input)
1.8 mW
(CMOS level input)
The information in this document is subject to change without notice.
Document No. M10856EJ6V0DS00 (6th edition)
Date Published September 1997 N
Printed in Japan
The mark shows major revised points.
© 1995

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