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Numéro de référence | CEF08N2 | ||
Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEF08N2
Nov. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
250V , 6A , RDS(ON)=450mΩ @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole
G
D
G
D
S
TO-220F
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
-Pulsed
ID
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperautre Range
PD
TJ, TSTG
Limit
250
Ć30
6
24
6
38
0.3
-50 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
3.3
65
C/W
C/W
1
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Pages | Pages 5 | ||
Télécharger | [ CEF08N2 ] |
No | Description détaillée | Fabricant |
CEF08N2 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | CET |
CEF08N6A | N-Channel Enhancement Mode Field Effect Transistor | CET |
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