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NXP Semiconductors - Power LDMOS transistor

Numéro de référence BLP8G20S-80P
Description Power LDMOS transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLP8G20S-80P fiche technique
BLP8G20S-80P
Power LDMOS transistor
Rev. 2 — 13 October 2014
Product data sheet
1. Product profile
1.1 General description
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to
2200 MHz.
Table 1. Typical performance
Typical RF performance per section at Tcase = 25 C in a common Doherty demo board.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
300 28 14.2 17 47 30 [1]
1880 to 1920
300 28 14.2 16.8 46 30 [1]
2110 to 2170
300 28 14.2 16 43 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1800 MHz to 2200 MHz)
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base station and multi-carrier applications in the 1800 MHz to
2200 MHz frequency range

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