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PDF IRFB4115PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFB4115PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRFB4115PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID (Silicon Limited)
150V
9.3mΩ
11mΩ
104A
D
G
Gate
S
D
G
TO-220AB
D
Drain
S
Source
Base Part Number
IRFB4115PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4115PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
dSingle Pulse Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat Greased Surface
ijJunction-to-Ambient
Max.
104
74
420
380
2.5
± 20
18
-55 to + 175
300
x x10lb in (1.1N m)
830
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 28, 2014
1 page  
IRFB4115PbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τJ τJ
τ1 τ1
R 1R 1
C i=Ci=τi/τRi/iRi
R2R 2
τ2 τ2
Ri (°C/W)
τCτC 0.245
0.155
τi (sec)
0.0059149
0.0006322
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
IF = 42A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
50
IF = 62A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
20 20
10 10
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig 14. - Typical Recovery Current vs. dif/dt
2500
2000
1500
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig 15. - Typical Recovery Current vs. dif/dt
3000
2400
1800
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
1000
1200
500 600
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig 16. - Typical Stored Charge vs. dif/dt
5 www.irf.com © 2014 International Rectifier
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig 17. - Typical Stored Charge vs. dif/dt
Submit Datasheet Feedback
April 28, 2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFB4115PBF.PDF ] | |
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