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Numéro de référence | FQP3N60C | ||
Description | N-Channel MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FQP3N60C
N-Channel QFET® MOSFET
600 V, 3.0 A, 3.4 Ω
Description
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
December 2013
Features
• 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
• Low Gate Charge (Typ. 10.5 nC)
• Low Crss (Typ. 5.0 pF)
• 100% Avalanche Tested
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP3N60C
600
3
1.8
12
±30
150
3
7.5
4.5
75
0.62
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2006 Fairchild Semiconductor Corporation
FQP3N60C Rev C1
1
FQP3N60C
1.67
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
www.fairchildsemi.com
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Pages | Pages 8 | ||
Télécharger | [ FQP3N60C ] |
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