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Nanya - Unbuffered DDR3 SDRAM DIMM

Numéro de référence M2F4G64CB8HD5N
Description Unbuffered DDR3 SDRAM DIMM
Fabricant Nanya 
Logo Nanya 





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M2F4G64CB8HD5N fiche technique
M2F2G64CB88D7N / M2F4G64CB8HD5N
2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
Based on DDR3-1066/1333 256Mx8 SDRAM D-Die
Features
•Performance:
Speed Sort
DIMM CAS Latency
fck Clock Freqency
tck Clock Cycle
fDQ DQ Burst Freqency
PC3-8500
-BE
7
533
1.875
1066
PC3-10600
-CG
9
667
1.5
1333
Unit
MHz
ns
Mbps
240-Pin Dual In-Line Memory Module (UDIMM)
256Mx64 (2GB) / 512Mx64 (4GB) DDR3 Unbuffered DIMM based
on 256Mx8 DDR3 SDRAM D-Die devices.
Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
VDD = VDDQ = 1.5V ±0.075V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
DRAM DLL aligns DQ and DQS transitions with clock transitions.
Address and control signals are fully synchronous to positive
clock edge
Nominal and Dynamtic On-Die Termination support
• Programmable Operation:
- DIMM  Latency: 5, 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
Two different termination values (Rtt_Nom & Rtt_WR)
15/10/1 (row/column/rank) Addressing for 2GB
15/10/2 (row/column/rank) Addressing for 4GB
Extended operating temperature rage
Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
SDRAMs are in 78-ball BGA Package
RoHS compliance and Halogen free product
Description
M2F2G64CB88D7N and M2F4G64CB8HD5N are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line
Memory Module (UDIMM), organized as one rank of 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array. Modules
use eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are
manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes
electrical variation between suppliers. All Elixir DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long
space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A13 (2GB) / A0-A14 (4GB) and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
03/2011
1
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.

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