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PDF PDJ2116DEBG Data sheet ( Hoja de datos )

Número de pieza PDJ2116DEBG
Descripción 2G bits DDR3 SDRAM
Fabricantes Deutron Electronics 
Logotipo Deutron Electronics Logotipo



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No Preview Available ! PDJ2116DEBG Hoja de datos, Descripción, Manual

DATA SHEET
2G bits DDR3 SDRAM
PDJ2108DEBG (256M words × 8 bits)
PDJ2116DEBG (128M words × 16 bits)
Specifications
Density: 2G bits
Organization:
32M words × 8 bits × 8 banks (PDJ2108DEBG)
16M words × 16 bits × 8 banks (EDJ2116DEBG)
Package:
78-ball FBGA (PDJ2108DEBG)
96-ball FBGA (PDJ2116DEBG)
Lead-free (RoHS compliant) and Halogen-free
Power supply: VDD, VDDQ = 1.5V ± 0.075V
Data rate
1600Mbps/1333Mbps (max.)
1KB page size (PDJ2108DEBG)
Row address: A0 to A14
Column address: A0 to A9
2KB page size (PDJ2116DEBG)
Row address: A0 to A13
Column address: A0 to A9
Eight internal banks for concurrent operation
Interface: SSTL_15
Burst lengths (BL): 8 and 4 with Burst Chop (BC)
Burst type (BT):
Sequential (8, 4 with BC)
Interleave (8, 4 with BC)
/CAS Latency (CL): 6, 7, 8, 9, 10, 11
/CAS Write Latency (CWL): 5, 6, 7, 8
Precharge: auto precharge option for each burst
access
Driver strength: RZQ/7, RZQ/6, RZQ/5 (RZQ = 240Ω)
Refresh: auto-refresh, self-refresh
Refresh cycles
Average refresh period
7.8μs at 0°C TC ≤ +85°C
3.9μs at +85°C < TC ≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Features
Double-data-rate architecture: two data transfers per
clock cycle
The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Posted /CAS by programmable additive latency for
better command and data bus efficiency
On-Die Termination (ODT) for better signal quality
Synchronous ODT
Dynamic ODT
Asynchronous ODT
Multi Purpose Register (MPR) for pre-defined pattern
read out
ZQ calibration for DQ drive and ODT
/RESET pin for Power-up sequence and reset
function
SRT range:
Normal/extended
Programmable Output driver impedance control
Seamless BL4 access with bank-grouping
Document Ver. 4.1 Deutron Electronics Corp.

1 page




PDJ2116DEBG pdf
PDJ2108DEBG, PDJ2116DEBG
CONTENTS
Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Pin Configurations (×8 configuration) ............................................................................................................3
Pin Configurations (×16 configuration) ..........................................................................................................4
Electrical Conditions ......................................................................................................................................7
Absolute Maximum Ratings .......................................................................................................................... 7
Operating Temperature Condition ................................................................................................................ 7
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................... 8
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)....................... 8
VREF Tolerances ......................................................................................................................................... 9
Input Slew Rate Derating ............................................................................................................................ 10
AC and DC Logic Input Levels for Differential Signals ................................................................................ 15
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) .................. 20
AC Overshoot/Undershoot Specification..................................................................................................... 23
Output Driver Impedance............................................................................................................................ 24
On-Die Termination (ODT) Levels and I-V Characteristics ......................................................................... 27
ODT Timing Definitions............................................................................................................................... 29
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................... 33
Electrical Specifications...............................................................................................................................46
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................................. 46
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V) ..................................................................... 48
Standard Speed Bins .................................................................................................................................. 49
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)....................... 51
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)....................... 51
Block Diagram .............................................................................................................................................59
Pin Function.................................................................................................................................................60
Command Operation ...................................................................................................................................62
Command Truth Table ................................................................................................................................ 62
CKE Truth Table ......................................................................................................................................... 66
Simplified State Diagram .............................................................................................................................67
RESET and Initialization Procedure ............................................................................................................68
Power-Up and Initialization Sequence ........................................................................................................ 68
Reset and Initialization with Stable Power .................................................................................................. 69
Programming the Mode Register.................................................................................................................70
Mode Register Set Command Cycle Time (tMRD) ..................................................................................... 70
MRS Command to Non-MRS Command Delay (tMOD) ............................................................................. 70
DDR3 SDRAM Mode Register 0 [MR0] ...................................................................................................... 71
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PDJ2116DEBG arduino
PDJ2108DEBG, PDJ2116DEBG
[Derating Values of tIS/tIH AC/DC based AC175 Threshold (DDR3-1333, 1600)]
ΔtIS, ΔtIH derating in [ps] AC/DC based
AC175 Threshold -> VIH(AC)=VREF(DC)+175mV, VIL(AC)=VREF(DC)-175mV
CK, /CK differential slew rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH Unit
2.0 +88 +50 +88 +50 +88 +50 +96 +58 +104 +66 +112 +74 +120 +84 +128 +100 ps
1.5 +59 +34 +59 +34 +59 +34 +67 +42 +75 +50 +83 +58 +91 +68 +99 +84 ps
1.0 0 0 0 0 0 0 +8
CMD,
ADD 0.9 2 4 2 4 2 4 +6
slew 0.8 6 10 6 10 6 10 +2
rate
(V/ns) 0.7 11 16 11 16 11 16 3
0.6 17 26 17 26 17 26 9
+8 +16 +16 +24 +24 +32 +34 +40 +50 ps
+4 +14 +12 +22 +20 +30 +30 +38 +46 ps
2 +10 +6 +18 +14 +26 +24 +34 +40 ps
8 +5 0
+13 +8 +21 +18 +29 +34 ps
18 1 10 +7 2 +15 +8 +23 +24 ps
0.5 35 40 35 40 35 40 27 32 19 24 11 16 2 6 +5 +10 ps
0.4 62 60 62 60 62 60 54 52 46 44 38 36 30 26 22 10 ps
[Derating Values of tIS/tIH AC/DC based-Alternate AC150 Threshold (DDR3-1333, 1600)]
ΔtIS, ΔtIH derating in [ps] AC/DC based
Alternate AC150 Threshold -> VIH(AC)=VREF(DC)+150mV, VIL(AC)=VREF(DC)-150mV
CK, /CK differential slew rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH Unit
2.0 +75 +50 +75 +50 +75 +50 +83 +58 +91 +66 +99 +74 +107 +84 +115 +100 ps
1.5 +50 +34 +50 +34 +50 +34 +58 +42 +66 +50 +74 +58 +82 +68 +90 +84 ps
1.0
CMD,
ADD 0.9
slew 0.8
rate
(V/ns) 0.7
0.6
0
0
0
0
1
00
4 0
10 0
16 0
26 1
00
4 0
10 0
16 0
26 1
0 +8
4 +8
10 +8
16 +8
26 +7
0.5 10 40 10 40 10 40 2
+8 +16 +16 +24 +24 +32 +34 +40 +50 ps
+4 +16 +12 +24 +20 +32 +30 +40 +46 ps
2 +16 +6 +24 +14 +32 +24 +40 +40 ps
8 +16 0
+24 +8 +32 +18 +40 +34 ps
18 +15 10 +23 2 +31 +8
32 +6 24 +14 16 +22 6
+39 +24 ps
+30 +10 ps
0.4 25 60 25 60 25 60 17 52 9 44 1 36 +7 26 +15 10 ps
[Required time tVAC above VIH(AC) {below VIL(AC)} for Valid Transition]
tVAC @ AC175 [ps]
tVAC @ AC150 [ps]
Slew rate (V/ns)
min.
max.
min.
max.
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
<0.5
75
57
50
38
34
29
22
13
0
0
175
170
167
163
162
161
159
155
150
150
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