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SamHop - Dual Enhancement Mode Field Effect Transistor

Numéro de référence STM8601
Description Dual Enhancement Mode Field Effect Transistor
Fabricant SamHop 
Logo SamHop 





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STM8601 fiche technique
STM8601
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID RDS(ON) (m) Max
60V 4.5A
58 @ VGS=10V
75 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID RDS(ON) (m) Max
-60V
-3.3A
105 @ VGS=-10V
150 @ VGS=-4.5V
S O-8
1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
N-Channel
P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
60 -60
±20 ±20
ID Drain Current-Continuous a TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
4.5 -3.3
3.6 -2.6
16 12
15 20
2.0
1.28
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,06,2008
www.samhop.com.tw

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