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L2N7002LT1G fiches techniques PDF

Leshan Radio Company - Small Signal MOSFET

Numéro de référence L2N7002LT1G
Description Small Signal MOSFET
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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L2N7002LT1G fiche technique
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
ESD Protected:1000V
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
VDSS
VDGR
ID
ID
IDM
60
60
±115
±75
±800
Vdc
Vdc
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
THERMAL CHARACTERISTICS
VGS
VGSM
±20 Vdc
±40 Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
RθJA
PD
556 °C/W
300 mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
TJ, Tstg
417
-55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
L2N7002LT1G
S-L2N7002LT1G
L2N7002LT3G
S-L2N7002LT3G
702
702
Shipping
3000 Tape & Reel
10000 Tape & Reel
L2N7002LT1G
S-L2N7002LT1G
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
Simplified Schematic
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
702
1
Gate
702
W
2
Source
= Device Code
=Month Code
Rev .O 1/4

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