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RJK60S7DPP-E0 fiches techniques PDF

Renesas - 600V - 30A - SJ MOS FET

Numéro de référence RJK60S7DPP-E0
Description 600V - 30A - SJ MOS FET
Fabricant Renesas 
Logo Renesas 





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RJK60S7DPP-E0 fiche technique
Preliminary Datasheet
RJK60S7DPP-E0
600V - 30A - SJ MOS FET
High Speed Power Switching
R07DS0643EJ0300
Rev.3.00
Dec 10, 2012
Features
Superjunction MOSFET
Low on-resistance
RDS(on) = 0.1 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
High speed switching
tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
1. Gate
G
2. Drain
3. Source
1
23
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. STch = 25C, Tch 150C
3. Value at Tc = 25C
Symbol
VDSS
VGSS
ID Note1
ID Note1
ID
Note1
(pulse)
IDR Note1
IDR (pulse) Note1
IAPNote2
EARNote2
Pch Note3
ch-c
Tch
Tstg
Ratings
600
+30, 20
30
19
60
30
60
7.5
3.06
34.7
3.6
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0643EJ0300 Rev.3.00
Dec 10, 2012
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