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IRF3305 fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF3305
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3305 fiche technique
PD - 95879
AUTOMOTIVE MOSFET
Features
O Designed to support Linear Gate Drive
Applications
O 175°C Operating Temperature
O Low Thermal Resistance Junction - Case
O Rugged Process Technology and Design
O Fully Avalanche Rated
Description
Specifically designed for use in linear automotive
applications this HEXFET Power MOSFET utilizes
a rugged planar process technology and device
design, which greatly improves the Safe Operating
Area (SOA) of the device. These features, coupled
with 175°C junction operating temperature and
low thermal resistance of 0.45C/W make the
IRF3305 an ideal device for linear automotive
applications.
G
IRF3305
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 8.0m
S ID = 75A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
iJunction-to-Ambient
www.irf.com
TO-220AB
Max.
140
99
75
560
330
2.2
± 20
470
860
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
7/2/04

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