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Hynix Semiconductor - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

Numéro de référence H57V2582GTR-75J
Description 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Fabricant Hynix Semiconductor 
Logo Hynix Semiconductor 





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H57V2582GTR-75J fiche technique
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
256M (32Mx8bit) Hynix SDRAM
Memory
Memory Cell Array
- Organized as 4banks of 8,388,608 x 8
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Aug. 2009
1

PagesPages 22
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