DataSheetWiki


RFVS8TG6S fiches techniques PDF

ROHM Semiconductor - Super Fast Recovery Diode

Numéro de référence RFVS8TG6S
Description Super Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RFVS8TG6S fiche technique
Super Fast Recovery Diode
RFVS8TG6S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
f3.8±0.06
4.5±0.1
10.2±0.2
1.28±0.06
lStructure
lApplication
General rectification
For PFC
(CCM : Continuous Current Mode)
RFVS8
TG6S
1
2
Cathode Anode
lFeatures
1) Hyper fast recovery / Hard recovery type
2) Ultra low switching loss
1.4±0.2
2.6±0.1
3) High current overload capacity
lConstruction
Silicon epitaxial planar type
2.54±0.1
5.08±0.1
0.83±00..0160
0.6±0.1
ROHM : TO-220AC
1 : Manufacture year, week,day, package code
2 : Serial number
lAbsolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
600 V
Reverse voltage
VR Direct reverse voltage
600 V
Average current
Io 60Hz half sin wave , resistive load
8A
Non-repetitive forward surge current IFSM 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C
60
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=8A
Tj=25°C 1.6
Tj=125°C -
Reverse current
IR
VR=600V
Tj=25°C
Tj=125°C
-
-
Reverse recovery time
IF=0.5A, IR=1A, Irr=0.25×IR -
trr
IF=8A, VR=400V, dIF/dt=-200A/ms -
Reverse recovery current
Reverse recovery charges
IRp
Qrr
IF=8A, VR=400V
dIF/dt=-200A/ms
Tj=125°C
-
-
Forward recovery time
Forward recovery voltage
tfr IF=8A, dIF/dt=100A/ms, -
VFp VFR=1.1xVFmax -
Thermal resistance
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case
-
-
Typ.
2.5
1.8
0.03
5
12
20
5.0
145
110
4.5
-
-
Max. Unit
3.0 V
-V
10 mA
200 mA
20 ns
40 ns
-A
- nC
- ns
-V
3.0 °C/W
1.8 °C/W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.A

PagesPages 6
Télécharger [ RFVS8TG6S ]


Fiche technique recommandé

No Description détaillée Fabricant
RFVS8TG6S Super Fast Recovery Diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche