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Hitachi Semiconductor - 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)

Numéro de référence HB56SW3272ESK
Description 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HB56SW3272ESK fiche technique
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM
32-Mword × 72-bit, 4k Refresh, 2 Bank Module
(36 pcs of 16M × 4 components)
ADE-203-872B (Z)
Rev. 1.0
June 23, 1998
Description
The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been
developed an optimized main memory solution for 4 and 8-byte processor applications. The
HB56SW3272ESK is 32 M × 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM
(HM5165405) sealed in TCP package and 2 pieces of 16-bit BiCMOS line driver sealed in TSSOP
package. The HB56SW3272ESK offer Extended Data Out (EDO) Page Mode as a high speed access
mode. An outline of the HB56SW3272ESK are 168-pin socket type package (dual lead out). Therefore, the
HB56SW3272ESK make high density mounting possible without surface mount technology. The
HB56SW3272ESK provide common data inputs and outputs. Decoupling capacitors are mounted beside
each TCP on its module board.
Note: Do not push the cover or drop the modules in order to protect from mechanical defects, which
would be electrical defects.
Features
168-pin socket type package (Dual lead out)
Lead pitch : 1.27 mm
Single 3.3 V supply (±0.3 V)
High speed
Access time: tRAC = 50 ns/60 ns (max)
Access time: tCAC = 18 ns/20 ns (max)
Low power dissipation
Active mode: 8.78 W/7.49 W (max)
Standby mode (TTL): 295.2 mW (max)
JEDEC standard outline buffered 8-byte DIMM
Buffered input except RAS and DQ

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