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Numéro de référence | R1LV0408DSA-5S | ||
Description | 4M SRAM | ||
Fabricant | Renesas | ||
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1 Page
R1LV0408D Series
4M SRAM (512-kword × 8-bit)
REJ03C0310-0100
Rev.1.00
May.24.2007
Description
The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s high-
performance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,
higher performance and low power consumption. The R1LV0408D Series offers low power standby
power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-
pin TSOP II and 32-pin STSOP.
Features
• Single 3 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation:
Standby: 3 µW (typ)
• Equal access and cycle times
• Common data input and output.
Three state output
• Directly TTL compatible.
All inputs and outputs
• Battery backup operation.
Rev.1.00, May.24.2007, page 1 of 12
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Pages | Pages 14 | ||
Télécharger | [ R1LV0408DSA-5S ] |
No | Description détaillée | Fabricant |
R1LV0408DSA-5S | 4M SRAM | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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