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R1LV0414DSB-5SI fiches techniques PDF

Renesas - 4M SRAM

Numéro de référence R1LV0414DSB-5SI
Description 4M SRAM
Fabricant Renesas 
Logo Renesas 





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R1LV0414DSB-5SI fiche technique
R1LV0414D Series
4M SRAM (256-kword × 16-bit)
REJ03C0312-0100
Rev.1.00
May.24.2007
Description
The R1LV0414D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas’s high-performance
0.15µm CMOS and TFT technologies. R1LV0414DSeries has realized higher density, higher performance and low
power consumption. The R1LV0414D Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 44-pin TSOP II.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Standby: 3 µW (typ) (VCC = 3.0 V)
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
Temperature range: -40 to +85°C
Ordering Information
Type No.
R1LV0414DSB-5SI
R1LV0414DSB-7LI
Access time
55 ns
70 ns
Package
400-mil 44-pin plastic TSOP II (44P3W-H)
Rev.1.00, May.24.2007, page 1 of 12

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