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BYD Microelectronics - 75V N-Channel MOSFET

Numéro de référence BF975NF75B
Description 75V N-Channel MOSFET
Fabricant BYD Microelectronics 
Logo BYD Microelectronics 





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BF975NF75B fiche technique
BYD Microelectronics Co., Ltd.
BF975NF75B
75V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any applications with low
gate drive requirements.
Features
z VDS =75 V
z ID =80A
z Typical RDS(ON)=7.5m (VGS=10V,ID=40A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
TJ,Tstg
TL
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
Note1
Note2
Note1
Note1
Note3
Value
75
80
320
±20
800
35
18
11
210
-55 to +175
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
Datasheet
TS-MOS-PD-0037 Rev.A/2
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