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Numéro de référence | DB3 | ||
Description | Bidirectional DIAC Trigger Diode | ||
Fabricant | TAITRON | ||
Logo | |||
1 Page
Bidirectional DIAC Trigger Diode
DB3/DB4
Bidirectional DIAC Trigger Diode
Features
• Low breakover current
• Excellent symmetry
• Very low leakage current
• Trigger diode with a fixed voltage reference
• High temperature soldering guaranteed:
250°C/10s/9.5mm lead length at 5 lbs tension
• RoHS Compliance
Mechanical Data
Case:
Terminals:
Weight:
Glass Case DO-35
Plated axial leads, solderable per MIL-STD-750, method 2026
Approx. 0.13 gram
DO-35
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
PD
ITRM
TJ
TSTG
RθJA
RθJL
Description
Power Dissipation on Printed Circuit (L=10mm)
(Ta=50°C)
Repetitive Peak on-state Current (tp=20µs,
f=100Hz)
Operating Temperature Range
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Case
DB3
DB4
150
2
-40 to +110
-40 to +125
400
150
Unit
mW
A
°C
°C
° C/W
° C/W
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. B/AH
Page 1 of 5
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Pages | Pages 5 | ||
Télécharger | [ DB3 ] |
No | Description détaillée | Fabricant |
DB-2933-54 | RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs | STMicroelectronics |
DB-3 | Silicon Bidirectional DIAC | Semtech Corporation |
DB-4 | Bi-directional trigger diodes | Leshan Radio Company |
DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor | ST Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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