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PDF C2312 Data sheet ( Hoja de datos )
| Número de pieza | C2312 | |
| Descripción | Silicon NPN POWER TRANSISTOR | |
| Fabricantes | HGSemi | |
| Logotipo |  |
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HG
Semiconductors
HG RF POWER TRANSISTOR
2SC2312
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION
Designed for RF power amplifier on HF band mobile
radio applications.
FEATURES
• Specified 12V, 27MHz Characteristics
• PO = 18.5W
• GP = 10.5 dB min. at 18.5 W/27 MHz
• Emitter ballasted construction
DIMENSIONS
–T–
SEATING
PLANE
C
TS
Q
H
U
Z
B
4
1 23
F
A
K
L
V
R
STYLE 1:
PIN 1. BASE
G
J
2. COLLECTOR
D
3. EMITTER
4. COLLECTOR
N
UNIT
mm
inc hes
A
15.75
14.48
0.620
0.570
B
10.28
9.66
0.405
0.380
C
4.82
4.07
0.19
0.16
D
0.88
0.64
0.035
0.025
F
3.73
3.61
0.147
0.142
G
2.66
2.42
0.105
0.095
H
3.93
2.8
0.155
0.110
J
0.64
0.46
0.025
0.018
K
14.27
12.70
0.562
0.500
L
1.52
1.15
0.060
0.045
N
5.33
4.83
0.210
0.190
Q
3.04
2.54
0.12
0.10
R
2.79
2.04
0.11
0.08
S
1.39
1.15
0.055
0.045
T
6.47
5.97
0.255
0.235
U
1.27
0.00
0.05
0.00
V
--
1.15
--
0.045
Z
2.04
--
0.08
--
MAXIMUM RATINGS
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Emitter-Base Voltage
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCES
VCEO
IC
VEBO
PDISS
TJ
TSTG
RATINGS
60
60
20
6
5
25
-65 to 175
-65 to 175
UNITS
V
V
V
A
V
W
°C
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Power Gain
Collector Efficiency
SYMBOL TEST CONDITIONS
V(BR)CEO IC=10mA,IB=0
V(BR)CES IC=1mA,VEB=0
V(BR)EBO IE=5mA,IC=0
ICBO VCB = 30V, IE = 0
hFE VCE=12V,IC=100mA
GP VCC=12V,POUT=18.5W,
ηC f=27MHZ ,PIN=1.5W
MIN.
20
60
5
20
10.5
60
TYP.
-
-
-
50
-
70
MAX. UNITS
-V
-V
-V
500 uA
180
- dB
-%
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet C2312.PDF ] | |
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