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Numéro de référence | IPG20N06S3L-35 | ||
Description | Power Transistor | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
OptiMOS®-T Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N06S3L-35
Product Summary
V DS
R
5)
DS(on),max
ID
55 V
35 mΩ
20 A
PG-TDSON-8-4
Type
IPG20N06S3L-35
Package
Marking
PG-TDSON-8-4 3N06L35
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2)
one channel active
Avalanche energy, single pulse2, 5)
Avalanche current, single pulse5)
Gate source voltage4)
Power dissipation
one channel active
T C=100 °C,
V GS=10 V2)
I D,pulse -
E AS
I AS
V GS
I D=10A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
20
Unit
A
15.5
80
55
20
±16
30
-55 ... +175
55/175/56
mJ
A
V
W
°C
2008-09-23
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Pages | Pages 9 | ||
Télécharger | [ IPG20N06S3L-35 ] |
No | Description détaillée | Fabricant |
IPG20N06S3L-35 | Power Transistor | Infineon |
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