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PDF IPG20N04S4L-11 Data sheet ( Hoja de datos )
| Número de pieza | IPG20N04S4L-11 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPG20N04S4L-11 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPG20N04S4L-11
Product Summary
V DS
R
4)
DS(on),max
ID
40 V
11.6 mW
20 A
PG-TDSON-8-4
Type
IPG20N04S4L-11
Package
Marking
PG-TDSON-8-4 4N04L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2)
one channel active
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V2)
I D,pulse -
E AS
I AS
V GS
I D=10A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
20
80
80
15
±16
41
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-10-05
1 page  
IPG20N04S4L-11
5 Typ. output characteristics4)
I D = f(V DS); T j = 25 °C
parameter: V GS
80
10 V 4.5 V
60
6 Typ. drain-source on-state resistance4)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
75
3V
3.5 V
65
4V
4V
55
45
40
3.5 V
35
20
0
0
3V
246
V DS [V]
8
25
15
5
0
4.5 V
10 V
20 40 60
I D [A]
80
7 Typ. transfer characteristics4)
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance4)
R DS(on) = f(T j); I D = 17 A; V GS = 10 V
80 20
-55 °C 25 °C
175 °C
17
60
14
40
11
20
8
0
1
Rev. 1.0
234
V GS [V]
5
5
-60 -20 20 60 100 140 180
T j [°C]
page 5
2010-10-05
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPG20N04S4L-11.PDF ] | |
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