(PDF) HAT2050T Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2050T
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2050T Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline ADE-208-660A (Z) 2nd. Edition February 1999 TSSOP–8 1 D 87 6 5 8 123 4 D 45 GG SS 23 MOS1 SS 67 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate 1 page Body–Drain Diode Reverse 500 Recovery Time 200 100 50 20 10 5 0.1 0.2 di/dt = 20 A/µs VGS = 0, Ta = 25°C 0.5 1 2 5 10 Reverse Drain Current I DR (A) HAT2050T 1000 300 100 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 30 Coss 10 3 Crss 1 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D= 1 A 40 V DD = 5 V 10 V 20 V 30 VGS 10 8 6 20 VDS 4 10 V DD = 20 V 2 10 V 5V 0 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nc) Switching Characteristics 100 VGS = 4 V, V DD = 10 V 50 PW = 5 µs, duty < 1 % t d(off) 20 10 t d(on) tr 5 tf 2 1 0.01 0.02 0.05 0.1 0.2 0.5 Drain Current I D (A) 1 5 5 Page

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PDF HAT2050T Data sheet ( Hoja de datos )