(PDF) HAT2040R Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2040R
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2040R Silicon N Channel Power MOS FET Power Switching Features • Capable of 4 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on)=6.2m typ Outline SOP–8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain ADE-208-565D (Z) 5th. Edition February 1999 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 Pulse Test 0.16 0.12 0.08 I D = 10 A 0.04 5 A 2A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) HAT2040R Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 VGS = 4 V 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 2 A, 5 A, 10 A 12 V GS = 4 V 8 4 10 V 2 A, 5 A, 10 A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 30 Tc = –25 °C 10 75 °C 3 25 °C 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 5 Page

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PDF HAT2040R Data sheet ( Hoja de datos )