|
|
Numéro de référence | HAT2036R | ||
Description | Silicon N Channel Power MOS FET Power Switching | ||
Fabricant | Hitachi Semiconductor | ||
Logo | |||
1 Page
HAT2036R
Silicon N Channel Power MOS FET
Power Switching
Features
• Low on-resistance
RDS(on)=12mΩ typ
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• High speed switching
tf=60ns typ.
ADE-208-665B(Z)
Target specification 3rd. Edition
May 1998
Outline
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
|
|||
Pages | Pages 5 | ||
Télécharger | [ HAT2036R ] |
No | Description détaillée | Fabricant |
HAT2036R | Silicon N Channel Power MOS FET Power Switching | Hitachi Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |