(PDF) HAT2033 Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2033
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2033R/HAT2033RJ Silicon N Channel Power MOS FET High Speed Power Switching Features • For Automotive Application ( at Type Code “J “) • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline SOP–8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain ADE-208-664B (Z) 3rd. Edition February 1999 1 page HAT2033R/HAT2033RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Pulse Test 0.4 0.3 0.2 ID=5A 0.1 2 A 1 A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 0.04 V GS = 4 V 5A 1, 2 A 1, 2, 5 A 0.02 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 50 20 Tc = –25 °C 10 25 °C 5 75 °C 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 5 Page

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PDF HAT2033 Data sheet ( Hoja de datos )