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Número de pieza | HAT2029 | |
Descripción | Silicon N Channel Power MOS FET High Speed Power Switching | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT2029 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! HAT2029R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-525D (Z)
5th. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
1 page HAT2029R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10 di/dt = 20 A/µs
5 VGS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
Reverse Drain Current
5 10
I DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
I D = 7.5 A
40
30
VDS
20
V DD = 5 V
10 V
20 V
V DD = 20 V
10 V
5V
10
VGS
10
8
6
4
2
0
0 4 8 12 16 20
Gate Charge Qg (nc)
Switching Characteristics
500
200 t d(off)
100 t f
50 t r
t d(on)
20
10
5
0.1
VGS = 4 V, V DD = 10 V
PW = 3 µs, duty < 1 %
0.2 0.5 1 2
5
Drain Current I D (A)
10
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet HAT2029.PDF ] |
Número de pieza | Descripción | Fabricantes |
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HAT2024R | Silicon N Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
HAT2025R | Silicon N Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
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