(PDF) HAT2025R Datasheet - Silicon N Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT2025R
Descripción	Silicon N Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching Features • High speed switching • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline ADE-208-518C (Z) 4th. Edition February 1999 SOP–8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 1 page HAT2025R Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 di/dt = 20 A/µs 5 VGS = 0, Ta = 25°C 0.1 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 1000 Ciss 300 Coss 100 Crss 30 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D= 8 A 40 30 VDS V DD = 5 V 10 V 25 V 20 16 12 20 VGS 8 10 V DD = 25 V 4 10 V 5V 0 0 4 8 12 16 20 Gate Charge Qg (nc) 1000 500 Switching Characteristics VGS = 4 V, V DD = 10 V PW = 3 µs, duty < 1 % 200 t r 100 tf 50 t d(off) t d(on) 20 10 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 10 5 5 Page

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PDF HAT2025R Data sheet ( Hoja de datos )