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HAT1023R fiches techniques PDF

Hitachi Semiconductor - Silicon P Channel Power MOS FET High Speed Power Switching

Numéro de référence HAT1023R
Description Silicon P Channel Power MOS FET High Speed Power Switching
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HAT1023R fiche technique
HAT1023R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
ADE-208-436 G (Z)
8th. Edition
June 1997
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain

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