(PDF) HAT1020 Datasheet - Silicon P Channel Power MOS FET High Speed Power Switching

Número de pieza	HAT1020
Descripción	Silicon P Channel Power MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline ADE-208-435 H (Z) 9th. Edition February 1999 SOP–8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 1 page HAT1020R Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 di / dt = 20 A / µs 5 VGS = 0, Ta = 25 °C –0.2 –0.5 –1 –2 –5 –10 –20 Reverse Drain Current I DR (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 30 VGS = 0 10 f = 1 MHz 0 –10 –20 –30 -40 –50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 0 V DD= –5 V –10 V 0 –10 –25 V –4 –20 V DS –30 –40 V GS V DD = –25 V –10 V –5 V –50 I D = –5 A 0 8 16 24 32 Gate Charge Qg (nc) –8 –12 –16 –20 40 Switching Characteristics 500 200 t r 100 t f 50 t d(off) 20 t d(on) 10 V GS = –4 V, V DD = –10 V 5 PW = 3 µs, duty < 1 % –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) –10 5 5 Page

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PDF HAT1020 Data sheet ( Hoja de datos )