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Numéro de référence | HAT1016R | ||
Description | Silicon P Channel Power MOS FET High Speed Power Switching | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
HAT1016R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-471 D (Z)
5th. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
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Pages | Pages 9 | ||
Télécharger | [ HAT1016R ] |
No | Description détaillée | Fabricant |
HAT1016R | Silicon P Channel Power MOS FET High Speed Power Switching | Hitachi Semiconductor |
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