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Hitachi Semiconductor - Silicon P Channel Power MOS FET High Speed Power Switching

Numéro de référence HAT1016R
Description Silicon P Channel Power MOS FET High Speed Power Switching
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HAT1016R fiche technique
HAT1016R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
ADE-208-471 D (Z)
5th. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

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