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PDF FTQ02N65B Data sheet ( Hoja de datos )
| Número de pieza | FTQ02N65B | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
| Logotipo |  |
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FTP02N65B
FTA02N65B FTQ02N65B
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Standby Power
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP02N65B
FTA02N65B
FTQ02N65B
PACKAGE
TO-220
TO-220F
TO-126
Pb Lead Free Package and Finish
VDSS
650V
RDS(ON) (Max.)
8.0 Ω
ID
1.5A
GDS TO-220
GDS TO-220F
G
BRAND
FTP02N65B
FTA02N65B
Q02N65B
GDS TO-126
Packages
Not to Scale
D
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP02N65B
FTQ02N65B
FTA02N65B
Units
VDSS
ID
ID@ 100 oC
IDM
PD
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
(NOTE *1)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
(NOTE *2)
Derating Factor above 25 oC
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=2.24 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
650
1.5 1.5*
Figure 3
Figure 6
52 21
0.42 0.17
± 30
25
Figure 8
3.0
300
260
-55 to 150
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
©2007 InPower Semiconductor Co., Ltd.
FTP02N65B FTA02N65B FTA02N65B REV. B. April 2007
1 page  
Figure 6. Maximum Peak Current Capability
100 TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
10
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
-1---5---0----–-----T---C---
125
1
VGS = 10V
0
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
5
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
4 VDS = 10 V
3
2
1
0
3.0
+150 oC
+25 oC
-55 oC
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Figure8. Unclamped Inductive
Switching Capability
10.0
STARTING TJ = 25 oC
1.0
STARTING TJ = 150 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
0.1E-6
1E-6 10E-6 100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
20
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
16
12
VGS = 10V
8
4
01 2 34 5
ID, Drain Current (A)
©2007 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
PULSE DURATION = 10 µs
0.50
0.25
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 1.5A
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
FTP02N65B FTA02N65B FTA02N65B REV. B . April 2007
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| PDF Descargar | [ Datasheet FTQ02N65B.PDF ] | |
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