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PDF HAL525UA-E Data sheet ( Hoja de datos )
| Número de pieza | HAL525UA-E | |
| Descripción | Hall Effect Sensor IC | |
| Fabricantes | ETC | |
| Logotipo |  |
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MICRONAS
HAL525, HAL535
Hall Effect Sensor IC
Edition Aug. 30, 2000
6251-465-3DS
MICRONAS
1 page  
HAL525, HAL535
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a mag-
netic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induc-
tion of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain out-
put switches to the appropriate state. The built-in hys-
teresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the mag-
netic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
Reverse
1 Voltage &
Overvoltage
VDD Protection
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit
and
Overvoltage
Protection
Hall Plate
Switch
Comparator
Output
3
OUT
Clock
2
GND
Fig. 2–1: HAL525, HAL535 block diagram
fosc
B
BON
VOUT
VOH
VOL
IDD
t
t
t
1/fosc = 9 µs
Fig. 2–2: Timing diagram
tf t
Micronas
5
5 Page 
mV
400
350
VOL
300
250
200
HAL 525, HAL 535
IO = 20 mA
TA = 170 °C
TA = 100 °C
150 TA = 25 °C
100 TA = –40 °C
50
0
0 5 10 15 20 25 30 V
VDD
Fig. 3–8: Typical output low voltage
versus supply voltage
mV
600
500
VOL
400
HAL 525, HAL 535
IO = 20 mA
300
TA = 170 °C
200 TA =100 °C
TA = 25 °C
100 TA = –40 °C
0
3 4 5 6 7V
VDD
Fig. 3–9: Typical output low voltage
versus supply voltage
Micronas
HAL525, HAL535
mV
400
VOL
300
200
HAL 525, HAL 535
IO = 20 mA
VDD = 3.8 V
VDD = 4.5 V
VDD = 24 V
100
0
–50 0
50 100 150 200 °C
TA
Fig. 3–10: Typical output low voltage
versus ambient temperature
A
104
HAL 525, HAL 535
103
IOH 102
101
100
10–1
TA = 170 °C
TA = 150 °C
TA = 100 °C
10–2
10–3
TA = 25 °C
10–4
10–5
TA = –40 °C
10–6
15 20 25 30 35 V
VOH
Fig. 3–11: Typ. output high current
versus output voltage
11
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet HAL525UA-E.PDF ] | |
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