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PDF HAL320 Data sheet ( Hoja de datos )
| Número de pieza | HAL320 | |
| Descripción | Differential Hall Effect Sensor IC | |
| Fabricantes | ETC | |
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MICRONAS
HAL320
Differential Hall Effect
Sensor IC
Edition July 15, 1998
6251-439-1DS
MICRONAS
1 page  
HAL320
Absolute Maximum Ratings
Symbol
Parameter
Pin No. Min.
VDD
–VP
–IDD
IDDZ
Supply Voltage
Test Voltage for Supply
Reverse Supply Current
Supply Current through
Protection Device
1 –15
1 –242)
1–
1 –2003)
VO
IO
IOmax
IOZ
Output Voltage
Continuous Output On Current
Peak Output On Current
Output Current through
Protection Device
3
3
3
3
–0.3
–
–
–2003)
TS Storage Temperature Range
–65
TJ Junction Temperature Range
–40
–40
1) as long as TJmax is not exceeded
2) with a 220 Ω series resistance at pin 1 corresponding to test circuit 1
3) t < 2 ms
4) t < 1000h
Max.
281)
–
501)
2003)
281)
30
2503)
2003)
150
150
1704)
Unit
V
V
mA
mA
V
mA
mA
mA
°C
°C
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
VDD
IO
VO
Rv
Parameter
Supply Voltage
Continuous Output On Current
Output Voltage
Series Resistor
Pin No.
1
3
3
1
Min.
4.5
–
–
–
Max.
24
20
24
270
Unit
V
mA
V
Ω
Micronas
5
5 Page 
HAL320
Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress on the sensor
must be avoided if the sensor is used under back-biased
conditions. This piezo sensitivity of the sensor IC cannot
be completely compensated for by the switching offset
compensation technique.
In order to assure switching the sensor on and off in a
back-biased application, the minimum magnetic modu-
lation of the differential field should amount to more than
10% of the magnetic preinduction.
If the HAL 320 sensor IC is used in back-biased applica-
tions, please contact our Application Department. They
will provide assistance in avoiding applications which
may induce stress to the ICs. This stress may cause
drifts of the magnetic parameters indicated in this data
sheet.
For electromagnetic immunity, it is recommended to ap-
ply a 4.7 nF capacitor between VDD (pin 1) and Ground
(pin 2). For automotive applications, a 220 W series re-
sistor to pin 1 is recommended. Because of the IDD peak
at 3.5 V, the series resistor should not be greater than
270 Ω. The series resistor and the capacitor should be
placed as close as possible to the IC. For optimal EMC
behavior, the test circuits in Fig. 21 and Fig. 22 are rec-
ommended.
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient tem-
perature TA).
TJ = TA + ∆T
At static conditions, the following equations are valid:
– for SOT-89x: ∆T = IDD * VDD * RthJSB
– for TO-92UA: ∆T = IDD * VDD * RthJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Recommended Test Circuits
for Electromagnetic Compatibility
Test pulses VEMC corresponding to DIN 40839.
RV
220 Ω
VEMC
VP
1 VDD
4.7 nF
2 GND
RL 1.2 kΩ
OUT
3
20 pF
Fig. 21: Test circuit 2: test procedure for class A
RV
220 Ω
VEMC
1 VDD
4.7 nF
2 GND
RL
OUT
3
680 Ω
Fig. 22: Test circuit 1: test procedure for class C
Micronas
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet HAL320.PDF ] | |
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