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Datasheet KP883C02-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
KP8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KP800A | Phase Control Thyristor "## @
0
!## 9(## !#; 9#( !#1
0
k !"#e$ %& *% + !"#e$ %& *% 2 2 3 2 4 && 3 2 4 2 5
0 0
' ' (# ) % +, -./k ' ' (# ) % +, -((k
!0( !0( !0( !0( !##
"## !#1. 9(## (# !# 9#( #:"( #:=0 0:0 !### @ @ 7¡ 7 ;
0 <
+
3 % 5 3 % 5
6 6
-
3
2-!#7 6 8!##
3 2 4
!#7 $ %& & 5 % 2 +
' 3
& $
-#:9
!0( !0(
 HUAJING thyristor | | |
| 2 | KP800A | thyristor 普 通 晶 闸 管
特点：
n n n n n n
KP800A
中心放大门极结构 平板型陶瓷管壳封装 低通态和开关损耗 大功率变流器 交直流开关 有源和无源逆变
典型应用：
IT(AV) VDRM/VRRM ITSM I2t
800 A 400-1000V 10 KA 500 103A2S
符号
参
数
测 试 条 件 1  ETC thyristor | | |
| 3 | KP823C03 | SCHOTTKY BARRIER DIODE KP823C03 (5A)
SCHOTTKY BARRIER DIODE
K-Pack(L)
(30V / 5A )
Outline drawings, mm
0.9
Features
Low VF Super high speed switching High reliability by planer design
JEDEC EIAJ
Connection diagram
Applications
High speed power switching
1 2 3
Maximum ratings and characteristics
Absolute maximum rat  Fuji Electric diode | | |
| 4 | KP823C04 | SCHOTTKY BARRIER DIODE KP823C04 (5A)
SCHOTTKY BARRIER DIODE
K-Pack(L)
(40V / 5A )
Outline drawings, mm
0.9
Features
Low VF Super high speed switching High reliability by planer design
JEDEC EIAJ
Connection diagram
Applications
High speed power switching
1 2 3
Maximum ratings and characteristics
Absolute maximum rat Fuji Electric diode | | |
| 5 | KP823C09 | SCHOTTKY BARRIER DIODE KP823C09 (5A)
SCHOTTKY BARRIER DIODE
(90V / 5A )
Outline drawings, mm
Features
Surface mount device Low VF Super high speed switching High reliability by planer design
JEDEC EIAJ
Connection diagram
Applications
High speed power switching
1 2 4 3
Maximum ratings and characteristics
Absolute max Fuji Electric diode | | |
| 6 | KP883C02 | SCHOTTKY BARRIER DIODE KP883C02 (7A)
SCHOTTKY BARRIER DIODE
(20V / 7A )
Outline drawings, mm
Features
Surface mount device Low VF Super high speed switching High reliability by planer design
JEDEC EIAJ
Connection diagram
Applications
High speed power switching
1 2 4 3
Maximum ratings and characteristics
Absolute max Fuji Electric diode | | |
| 7 | KP8N60D | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplie  KEC transistor | |
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| Número de pieza | Descripción | Fabricantes | |
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