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Hitachi Semiconductor - Silicon N Channel MOS FET Series Power Switching

Numéro de référence HAF2011
Description Silicon N Channel MOS FET Series Power Switching
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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HAF2011 fiche technique
HAF2011(L),HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching
Target specification
ADE-208-738 (Z)
1st. Edition
Jan. 1999
Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain

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