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Numéro de référence | GFP5N60 | ||
Description | N-Channel enhancement mode power field effect Transistors | ||
Fabricant | ETC | ||
Logo | |||
GFP5N60
General Description(概述)
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
GFP5N60是增强型N沟道功率场效应管,采用平面条形DMOS
工艺生产制造。
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supply.
GFP5N60具有低导通电阻、优越的开关特性以及抗雪崩击穿
能力,适合用于高效开关电源。
TO-220
1.Gate 2.Drain 3.Source
Absolute Maximum ratings(极限参数,除非另有规定,T=25 ℃ )
Characteristics(参数)
漏源反向击穿电压
连续漏极电流
栅源电压
雪崩能量
耗散功率
储存温度
热阻(结到壳)
正向压降
Symbol(符号)
BVDSS
ID
VGS
EAS
PD
TSTG
RθJC
VSD
Value(额定值)
600
5
+ 30
300
120
-55 ~150
1.18
1.4
Units(单位)
V
A
V
mJ
W
℃
℃/ W
V
Characteristics
参数名称
开启电压
栅源漏电流
漏源漏电流
导通电阻
跨导
输入电容
输出电容
传输电容
导通延迟时间
上升时间
下降延迟时间
下降时间
栅极存储电荷
栅源电荷
栅漏电荷
Symbol
(符号)
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Min.
Typ.
(最小值) (典型值)
2.0 -
--
--
- 1.6
-4
- 560
- 80
-9
- 13
- 45
- 35
- 40
- 16
- 3.5
- 7.8
Page : 1/5
Max.
(最大值)
4.0
+100
10
2.0
-
730
100
12
35
100
80
90
20
-
-
Units
(单位)
V
nA
uA
Ω
S
Test Conditions
(测试条件)
VDS= VGS,ID=250uA
VGS= +30V, VDS= 0V
VDS=600V ,VGS= 0V
VGS= 10V,ID=2.5A
VDS= 50V, ID=2.5A
pF VGS= 0V, VDS= 25V
F=1.0MHz
ns
VDD= 300V, ID= 5A
RG=25 Ω
nC VDS= 480V, VGS= 10V
ID=5A
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Pages | Pages 5 | ||
Télécharger | [ GFP5N60 ] |
No | Description détaillée | Fabricant |
GFP5N60 | N-Channel enhancement mode power field effect Transistors | ETC |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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